香港大学Junzhi Liu研究组近日取得一项新成果。经过不懈努力，他们开发出了一个BN-掺杂的U型杂多环芳烃，作为双极电荷捕获内存的分子浮动门控。这一研究成果发表在2023年3月25日出版的国际学术期刊《德国应用化学》上。
在这项研究中，有或无硼氮（BN）掺杂（BN-1和C-1）两种宽禁带U型多环芳烃被合成出来，以优化适合有机场效应晶体管忆阻器（OFET-NVM）性能要求的电子特性。研究人员使用扫描隧道显微镜和单晶衍射观察了其化学结构的特点。由于N元素高电子供体和B元素高电子受体的影响，与C-1和大多数已报道小分子相比，这种BN-1基的OFET-NVM显示出大的双极内存窗口和增强电荷存储密度。
进一步研究表明，BN-1和PMMA形成的一种新颖的超分子体系使人可以编织具有统一微观结构的均一膜，其可作为二合一的隧道双电层和电荷俘获层，实现电荷长久保留和可靠的耐用性。他们的研究结果表明，BN掺杂和超分子工程对OFET-NVM的电荷捕获是至关重要的。
附：英文原文
Title: A BN-Doped U-Shaped Heteroacene as a Molecular Floating Gate for Ambipolar Charge Trapping Memory
Author: Yang Yu, Le Wang, Dongqing Lin, Shammi Rana, Kunal S. Mali, Haifeng Ling, Linghai Xie, Steven De Feyter, Junzhi Liu
Issue&Volume: 2023-03-25
Abstract: Two wide-bandgap U-shaped polycyclic aromatic hydrocarbons with/without boron and nitrogen (BN-) doping (BN-1 and C-1) were synthesized to tune the electronic features to suit the performance requirements in organic field-effect transistor memory (OFET-NVM). The chemical structures were characterized by scanning tunneling microscopy and single crystal diffraction. Owing to the electron donor effect of N and the high electron affinity of B, the BN-1-based OFET-NVM displays large ambipolar memory windows and an enhanced charge storage density compared to C-1 and most of the reported small molecules. A novel supramolecular system formed via BN-1 and PMMA contributes to fabricating uniform films with homogeneous microstructures, which serve as a two-in-one tunnelling dielectric and charge trapping layer to realize long-term charge retention and reliable endurance. Our results demonstrate that both BN doping and supramolecular engineering are crucial for the charge trapping of OFET-NVM
DOI: 10.1002/anie.202303335
Source: https://onlinelibrary.wiley.com/doi/10.1002/anie.202303335
