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Graphene doping: A review

已有 4790 次阅读 2011-4-30 13:33 |系统分类:论文交流

Graphene doping-A review.pdf

Abstract: Graphene, a new material for the electron-device community, has many extraordinary properties. Especially, it provides a perfect platform to explore the unique electronic property in absolutely two-dimensions. However, most electronic applications are handicapped by the absence of a semiconducting gap in pristine graphene. To control the semiconducting properties of graphene, doping is regarded as one of the most feasible methods. Herein, a brief review is given on the recent research progress of graphene doping, which is roughly divided into three categories: First, the hetero atom doping, including arc discharge, chemical vapor deposition, electrothermal reaction and ion-irradiation approaches; Second, the chemical modification strategy; Third, the method of electrostatic field tuning. In addition, the various potential applications of the above doping methods are also introduced.


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