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云师大物电学院在化工杂志刊登最新研究成果

已有 2622 次阅读 2020-10-31 16:06 |个人分类:云师大研究|系统分类:科普集锦| 云师大, 物电学院, 光电探测器

近日国际权威期刊《化学工程》刊登了云南师范大学物理与信息电子学院光电子研究最新研究成果《用于高性能光电探测器的有机铅卤化物钙钛矿微丝阵列/单CdSe纳米带合成的研究


Chemical Engineering Journal

Volume 406, 15 February 2021, 126779

Hybrid organolead halide perovskite microwire arrays/single CdSe nanobelt for a high-performance photodetector

Author links open overlay panelWenpingRenaQiuhongTanabQianjinWangabYingkaiLiuab

  • a

  • College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming 650500, China

  • b

  • Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming 650500, China

Received 12 June 2020, Revised 8 August 2020, Accepted 21 August 2020, Available online 27 August 2020.

crossmark-logoShow lesshttps://doi.org/10.1016/j.cej.2020.126779Get rights and content

Highlights

  • A photodetector based on CH3NH3PbI3 MAs/single CdSe NB is fabricated for the first time.

  • The prepared method is simple and low-cost.

  • The structure promotes the effective separation of generated electron-hole pairs.

  • The photodetector exhibits excellent performance.

Abstract

The hybrid approach by combining organic–inorganic halide perovskite with semiconductor materials is considered as an effective route in improving photosensitivity and broader spectral response of the photodetector. Here, a photodetector based on hybrid organolead halide perovskite microwire arrays (CH3NH3PbI3 MAs)/single Cadmium Selenide nanobelt (CdSe NB) has been successfully fabricated and characterized for the first time by one-step methods combining thermal evaporation. The hybrid structure can promote the effective separation of the generated electron-hole pairs in photoluminescence and thus exhibits an amazing optoelectric performance. The photo-to-dark current ratio is as high as 2.152 × 103, the responsivity, external quantum efficiency and photodetectivity are 69.11A/W, 11000% and 8.6 × 1012 Jones, respectively. Besides, the rise and decay time of the device are 0.81 ms and 0.77 ms, respectively. The excellent optoelectronic properties compared to those of other CH3NH3PbI3/semiconductor hybrids indicate CH3NH3PbI3 MAs/single CdSe NB hybrids are promising building blocks for optoelectronic applications.




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