Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices

J. Semicond. Volume 40, Number 12, December 2019

Magnetic LEGO: van der Vaals interlayer magnetism

Lifeng Yin

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/120201

Research status and prospects of deep ultraviolet devices

Hideki Hirayama

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/120301

Laser fabrication of graphene-based soft robots

Bing Han, Yong-Lai Zhang

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/120401

III-nitride based ultraviolet laser diodes

Degang Zhao

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/120402

Preface to the Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices

Jinmin Li, Xinqiang Wang, Dabing Li, Tongbo Wei

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/120101

Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

Nasir Alfaraj, Jung-Wook Min, Chun Hong Kang, Abdullah A. Alatawi, Davide Priante, Ram Chandra Subedi, Malleswararao Tangi, Tien Khee Ng, Boon S. Ooi

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/121801

Recent progress of SiC UV single photon counting avalanche photodiodes

Linlin Su, Dong Zhou, Hai Lu, Rong Zhang, Youdou Zheng

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/121802

The fabrication of AlN by hydride vapor phase epitaxy

Maosong Sun, Jinfeng Li, Jicai Zhang, Wenhong Sun

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/121803

Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Congyu Hu, Katsuhiko Saito, Tooru Tanaka, Qixin Guo

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122801

A contrivance of 277 nm DUV LD with B_0.313Ga_0.687N/B_0.40Ga_0.60N QWs and Al_xGa_1–xN heterojunction grown on AlN substrate

Mussaab I. Niass, Muhammad Nawaz Sharif, Yifu Wang, Zhengqian Lu, Xue Chen, Yipu Qu, Zhongqiu Du, Fang Wang, Yuhuai Liu

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122802

Study of the morphology evolution of AlN grown on nano-patterned sapphire substrate

Zhuohui Wu, Jianchang Yan, Yanan Guo, Liang Zhang, Yi Lu, Xuecheng Wei, Junxi Wang, Jinmin Li

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122803

Hot electron effects on the operation of potential well barrier diodes

M. Akura, G. Dunn, M. Missous

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122101

Improved efficiency and photo-stability of methylamine-free perovskite solar cells via cadmium doping

Yong Chen, Yang Zhao, Qiufeng Ye, Zema Chu, Zhigang Yin, Xingwang Zhang, Jingbi You

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122201

Analytical model for the effects of the variation of ferrolectric material parameters on the minimum subthreshold swing in negative capacitance capacitor

Raheela Rasool, Najeeb-ud-Din, G. M. Rather

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122401

Contact etch process optimization for RF process wafer edge yield improvement

Zhangli Liu, Bingkui He, Fei Meng, Qiang Bao, Yuhong Sun, Shaojun Sun, Guangwei Zhou, Xiuliang Cao, Haiwei Xin

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122402

Selection of DBO measurement wavelength for bottom mark asymmetry based on FDTD method

Buqing Xu, Qiang Wu, Lisong Dong, Yayi Wei

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122403

Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor

Zhongjie Guo, Ningmei Yu, Longsheng Wu

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122404

Simulation and application of external quantum efficiency of solar cells based on spectroscopy

Guanlin Chen, Can Han, Lingling Yan, Yuelong Li, Ying Zhao, Xiaodan Zhang

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122701

A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

C. Usha, P. Vimala

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122901

Improvement of tunnel compensated quantum well infrared detector

Chaohui Li, Jun Deng, Weiye Sun, Leilei He, Jianjun Li, Jun Han, Yanli Shi

J. Semicond. 2019, 40(12): 10.1088/1674-4926/40/12/122902