杨正瓴
[笔记,资料,芯片] 集成电路:莱霍韦茨 Kurt Lehovec 的“反向偏压P-N结”电气隔离
2025-1-14 22:51
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[笔记,资料,芯片] 集成电路:莱霍韦茨 Kurt Lehovec 的“反向偏压P-N结”电气隔离

                                

集成电路 integrated circuit

莱霍韦茨 Kurt Lehovec 1918-06-12 ~ 2012-02-17, 93

反向偏置p-n结 a reverse-biased p-n junction, a P-N junction biased in the reverse direction

p-n结隔离 p-n junction isolation

多半导体组件 Multiple semiconductor assembly

                       

Kurt Lehovec   87979443_133340687087.jpg

图1  莱霍韦茨 Kurt Lehovec 1918-06-12 ~ 2012-02-17, 93

Kurt Lehovec   87979443_133340687087.jpg

https://images.findagrave.com/photos/2012/92/87979443_133340687087.jpg?size=photos250

https://www.findagrave.com/memorial/87979443/kurt-lehovec#

Professor Kurt Lehovec Kurt Lehovec.jpg

https://www.ithistory.org/sites/default/files/honor-roll/Kurt%20Lehovec.jpg

https://www.ithistory.org/honor-roll/professor-kurt-lehovec

                           

                            

   以下对应英文的汉语,来自【机器翻译】。

                          

一、笔记:莱霍韦茨 Kurt Lehovec 的“反向偏压P-N结”电气隔离

https://baijiahao.baidu.com/s?id=1782259232661644225

   至于电气隔离的方法,德州仪器公司不认同斯普拉格电气公司的发明,发起了诉讼。斯普拉格电气公司的领导对于丢掉这个重要的专利一点都不上心,最后还是莱霍韦茨自掏腰包坐飞机去了华盛顿应诉。在法庭上,莱霍韦茨单枪匹马地面对德州仪器公司十几人组成的强大阵容,推翻了他们的诉讼请求,捍卫了自己的成果。

   在这短短的一年时间里,德州仪器的基尔比首先提出并实现了单片集成技术,而仙童半导体的诺伊斯首先提出并实现了互连技术,斯普拉格电气公司的莱霍韦茨则首先提出了电气隔离技术,这三项技术组合起来,成为集成电路技术的基石。

https://baijiahao.baidu.com/s?id=1782259232661644225

                          

https://zhuanlan.zhihu.com/p/122965436

   Ti申请微型电子线路专利,成功阻止RCA公司染指集成电路企图。全半导体化思想激发仙童更大野心。仙童选择Sprague电气的莱霍韦茨发明“多个半导体器件隔离技术”专利—反向偏压P-N结方法,解决最核心的电气隔离问题,仙童成功截胡钢铁巨人。

                          

   发光二极管(LED)是Kurt Lehovec所取得第一个最重要的半导体技术。 Kurt Lehovec的第二个主要的贡献是,他解释了固体中离子快速传导的重要情况是在离子晶体的表面空间电荷层中进行。

                          

   库尔特.莱霍韦茨最主要的成就就是发明了一种“多个半导体器件隔离的技术”的专利,并在1959年4月22号申请,专利号为3029366,专利名称为“多半导体组件(Multiple Semiconductor Assembly)”。

   这项技术是库尔特.莱霍韦茨对全球半导体产业和集成电路技术的发展所作出的最重要的贡献。 在这篇专利中,库尔特.莱霍韦茨创新了“P—N结隔离”的概念,在每个带保护环的电路元件中使用:一个围绕该元件平面外围的反向偏压p-n结。这一专利技术,为仙童半导体公司诺伊斯成功研制集成电路起到了关键性的作用。也正是凭借这一核心技术,库尔特.莱霍韦茨,亦被誉为“集成电路的先驱”之一。

   1959年,库尔特.莱霍韦茨发明了“多个半导体器件隔离技术”的专利,这是集成电路的结隔离技术。同年,罗伯特.诺伊斯在仙童半导体公司开发集成电路时,基于库尔特.莱霍韦茨的想法,在一个小型硅芯片上开发出完全集成的电子电路,然后将其商业化生产。最关键的是,这项技术,在集成电路发明专利这一问题上,使得仙童半导体公司成功的对德州仪器进行了“截胡”。

https://zhuanlan.zhihu.com/p/122965436

                          

https://www.nutsvolts.com/magazine/article/the-birth-of-the-integrated-circuit

   He recalled that, “Everyone knows a P-N junction biased in the reverse direction blocks current, so it didn’t take a great deal of development to show this would work.” He immediately realized the importance of his discovery. In order to save time, he proceeded to write up the patent application and file it himself, bypassing the slower company patent attorney. It was filed on April 22, 1959, and the “Multiple Semiconductor Assembly” patent was issued on April 10, 1962, and assigned to Sprague. Because Lehovec was under salary with Sprague, he was paid only one dollar for this invention.

   【机器翻译】他回忆说,“每个人都知道,反向偏置的P-N结会阻挡电流,所以不需要太多的发展就能证明这是有效的。”他立即意识到这一发现的重要性。为了节省时间,他绕过速度较慢的公司专利律师,着手撰写专利申请并亲自提交。它于1959年4月22日提交,1962年4月10日颁发了“多半导体组件”专利,并转让给Sprague。因为Lehovic在Sprague的薪水很低,所以这项发明只给了他一美元。

https://www.nutsvolts.com/magazine/article/the-birth-of-the-integrated-circuit

                          

https://www.findagrave.com/memorial/87979443/kurt-lehovec#

   In his work on light-emitting diodes, or LEDs, Lehovec is known for inventing the process of junction isolation for integrated circuits while he was working for Sprague Electric Co.

   He received a patent for the innovation in 1959, but otherwise did not profit from the groundbreaking work. That same year, while working for Fairchild Semiconductor Corp., Robert Noyce built on Lehovec's idea in developing the completely integrated electronic circuit on a small silicon chip that could then be commercially produced.

   【机器翻译】Lehovic在为Sprague Electric Co.工作期间,以发明集成电路的结隔离工艺而闻名。

   1959年,他获得了这项创新的专利,但除此之外,他并没有从这项突破性的工作中获利。同年,罗伯特·诺伊斯在飞兆半导体公司工作时,借鉴了勒霍维奇的想法,在一个小硅芯片上开发了完全集成的电子电路,然后可以进行商业生产。

                          

   He is best known for his work on the light-emitting diode, the photovoltaic effect in a solar cell and p/n junction isolation in microchips, which helped lay the groundwork for semiconductor technology. After his retirement from USC,

   他最出名的是他在发光二极管、太阳能电池中的光伏效应和微芯片中的p/n结隔离方面的工作,这些工作为半导体技术奠定了基础。

https://www.findagrave.com/memorial/87979443/kurt-lehovec#

                          

https://www.electronicsweekly.com/blogs/mannerisms/yarns/the-americanisation-of-kurt-le-2010-02/

   Lehovec invented the concept of p-n junction isolation used in every circuit element with a guard ring while working for Sprague Electric. He was one of three scientists who wrote a paper first explaining the workings of LEDs.

   【机器翻译】Lehovic在为Sprague Electric工作时发明了p-n结隔离的概念,用于每个带有保护环的电路元件。他是三位首次发表论文解释LED工作原理的科学家之一。

https://www.electronicsweekly.com/blogs/mannerisms/yarns/the-americanisation-of-kurt-le-2010-02/

                          

https://www.ithistory.org/honor-roll/professor-kurt-lehovec

   With Accardo and Jamgochian, he explained the first light-emitting diodes making him one of the pioneers of the integrated circuit. He innovated the concept of p-n junction isolation used in every circuit element with a guard ring: a reverse-biased p-n junction surrounding the planar periphery of that element. This patent was assigned to Sprague Electric. Because he was under salary with Sprague, he was paid only one dollar for this invention.

   【机器翻译】他与Accardo和Jamgochian一起解释了第一批发光二极管,使他成为集成电路的先驱之一。他创新了p-n结隔离的概念,该概念用于每个带有保护环的电路元件:围绕该元件平面外围的反向偏置p-n结。该专利已转让给Sprague Electric。因为他在Sprague的薪水很低,所以这项发明只给了他一美元。

https://www.ithistory.org/honor-roll/professor-kurt-lehovec

                          

二、???

                          

                     

参考资料:

[1] 汪波《芯片简史》,2023-11-11,从晶体管到集成电路:仙童半导体与德州仪器的争夺战

https://baijiahao.baidu.com/s?id=1782259232661644225

[2] 知乎,2020-08-06,芯片战争-54:仙童截胡钢铁巨人

https://zhuanlan.zhihu.com/p/122965436

[3] Nuts & Volts Magazine, 2021, The birth of the integrated circuit

https://www.nutsvolts.com/magazine/article/the-birth-of-the-integrated-circuit

[4] Kurt Lehovec. Multiple semiconductor assembly [P].  U. S. Patent 3029366 (Filed April 22, 1959. Issued April 10, 1962).

https://ppubs.uspto.gov/pubwebapp/static/pages/ppubsbasic.html

https://ppubs.uspto.gov/dirsearch-public/print/downloadBasicPdf/3029366?requestToken=eyJzdWIiOiI0ODkwMmUxZC04MjRhLTQ2MWQtYmY2Mi0yNjY2YjVhNGRmMzYiLCJ2ZXIiOiI1NzM3NzkzZS1hYWRlLTQ5NTctOTMxMS0xNTJlNDA0MWQxMjkiLCJleHAiOjB9

https://ppubs.uspto.gov/dirsearch-public/patents/html/3029366?source=USOCR&requestToken=eyJzdWIiOiI0ODkwMmUxZC04MjRhLTQ2MWQtYmY2Mi0yNjY2YjVhNGRmMzYiLCJ2ZXIiOiI2NWE2NjZkMy1lOTlhLTRhMTUtYTRkOS02MDkzZTFjZDQzZDMiLCJleHAiOjB9

[5] 1959: PRACTICAL MONOLITHIC INTEGRATED CIRCUIT CONCEPT PATENTED,  ROBERT NOYCE BUILDS ON JEAN HOERNI'S PLANAR PROCESS TO PATENT A MONOLITHIC INTEGRATED CIRCUIT STRUCTURE THAT CAN BE MANUFACTURED IN HIGH VOLUME.  Computer History Museum

https://www.computerhistory.org/siliconengine/practical-monolithic-integrated-circuit-concept-patented/

CONTEMPORARY DOCUMENTS

Noyce, Robert N. "Semiconductor device-and-lead structure," U. S. Patent 2981877 (Filed July 30, 1959. Issued April 25, 1961).

Lehovec, Kurt. "Multiple Semiconductor Assembly" U. S. Patent 3029366 (Filed April 22, 1959. Issued April 10, 1962).

[6] 1959: INVENTION OF THE "PLANAR" MANUFACTURING PROCESS,  JEAN HOERNI DEVELOPS THE PLANAR PROCESS TO SOLVE RELIABILITY PROBLEMS OF THE MESA TRANSISTOR, THEREBY REVOLUTIONIZING SEMICONDUCTOR MANUFACTURING.  Computer History Museum

https://www.computerhistory.org/siliconengine/invention-of-the-planar-manufacturing-process/

                            

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https://blog.sciencenet.cn/blog-107667-1397631.html

[3] 2019-07-07,有关 Geoffrey W. A. Dummer 先生的网页

https://blog.sciencenet.cn/blog-107667-1188470.html

[4] 2023-10-29,[图片,小资料] 诺伊斯(Robert Norton Noyce)的第一个集成电路

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