[小资料,历史] 1948-07 欧洲点接触晶体管,只比贝尔实验室晚了 7个月
点接触晶体管: point-contact transistor
马塔雷: Herbert Franz Mataré, 1912-09-22 ~ 2011 09-02, 99
韦尔克: Heinrich Welker, 1912-09-09 ~ 1981-12-25, 69
外语由【机器翻译】成汉语,个别之处进行了人工修改。
图1 Transistor twin: The cross-section drawing [right] from the french magazine toute la radio depicts the inside of a commercial Westinghouse transistron [above center]. In the drawing, the two metal points (chercheurs) contact the surface of a germanium sliver (cristal). A technician adjusted the positions of the two contacts to give the proper electrical characteristics while viewing them through a window (fenêtre). The internal structure is similar to bell Labs' first prototype point-contact transistor [far right], produced in 1948.
https://ieeexplore.ieee.org/document/1526906
晶体管双胞胎:法国杂志 toute la radio 的横截面图(右)描绘了西屋商用晶体管的内部(中上方)。在图中,两个金属点(chercheurs)接触锗条(cristal)的表面。一名技术人员调整了两个触点的位置,以在通过窗口(fenêtre)观察时提供适当的电气特性。内部结构类似于贝尔实验室 1948年生产的第一个原型点接触晶体管(最右边)。
一、1948-07 欧洲点接触晶体管,比贝尔实验室晚了 7个月
1948-07,在巴黎的西屋电气公司(Compagnie des Freins et Signaux, Westinghouse Electric Corporation)工作的德国人 Herbert Franz Mataré 和 Heinrich Welker,发明了“transistron”。它和 7个月之前贝尔实验室的点接触晶体管,十分相似。
在 1948-06-30 贝尔实验室公布“点接触晶体管”之前进行了严格的保密,Mataré 和 Welker 不会知道贝尔的技术细节。
1947-12-16,贝尔实验室的巴丁(John Bardeen)、布拉坦(Walter Houser Brattain)制作出第一只“点接触晶体管 pointcontact transistor, point-contact transistor”。
地点:新泽西州默里山贝尔实验室1号楼四层(the fourth floor of Building 1 at Bell Labs in Murray Hill, NJ.)。
谁知道房间号?
https://www.computerhistory.org/siliconengine/the-european-transistor-invention/
In 1948, the point-contact transistor was independently invented by two German physicists working in Paris. (1947 Milestone) Herbert Mataré and Heinrich Welker had been deeply involved in the German radar effort during World War II. Mataré developed crystal rectifiers from silicon and germanium at the Telefunken laboratories in Berlin and Silesia, while Welker worked on purifying germanium in Munich. After the war ended, they were hired by the Compagnie des Freins et Signaux, a Westinghouse subsidiary, to develop and manufacture solid-state rectifiers from these materials.
1948年,两位在巴黎工作的德国物理学家独立发明了点接触晶体管。(1947年里程碑)赫伯特·马塔雷和海因里希·韦尔克在第二次世界大战期间深度参与了德国的雷达工作。Mataré 在柏林和西里西亚的 Telefunken 实验室用硅和锗开发了晶体整流器,而 Welker 在慕尼黑从事锗的纯化工作。战争结束后,他们受雇于西屋电气子公司 Compagnie des Freins et Signaux,用这些材料开发和制造固态整流器。
https://www.computerhistory.org/siliconengine/the-european-transistor-invention/
https://spectrum.ieee.org/how-europe-missed-the-transistor
What is arguably the most important invention of the 20th century remarkably occurred twice—and independently. Given the secrecy shrouding the Bell Labs device, there is no possibility Mataré and Welker could have been influenced by knowledge of it before July 1948, when news of the revolutionary invention became widespread. And it seems clear from the still-sketchy historical record that they indeed had a working, reliable amplifier by that time.
可以说,20世纪最重要的发明发生了两次,而且都是独立的。鉴于贝尔实验室设备的保密性,Mataré 和 Welker 不可能在 1948年7月革命发明的消息广泛传播之前受到它的影响。从仍然粗略的历史记录中可以清楚地看出,当时他们确实有一个工作可靠的放大器。
This dual, nearly simultaneous breakthrough can be attributed in part to the tremendous wartime advances in purifying silicon and, in particular, germanium. In both cases, germanium played the crucial gateway role, for in the immediate postwar years it could be refined much more easily and with substantially higher purities than silicon. Such high-purity semiconductor material was absolutely essential for fabricating the first transistors.
这一双重的、几乎同时发生的突破部分归功于战时在提纯硅,特别是锗方面的巨大进步。在这两种情况下,锗都发挥了至关重要的门户作用,因为在战后不久的几年里,锗可以比硅更容易地精炼,纯度也高得多。这种高纯度半导体材料对于制造第一晶体管是绝对必要的。
A factor crucial to success in the nascent semiconductor industry was the sustained innovation that flourished at Bell Labs—as well as at Texas Instruments and Fairchild Semiconductor—leading to silicon transistors and integrated circuits. And that required extensive infrastructure, both material and intellectual, to keep these companies at the frontiers of this fast-moving field. Such an infrastructure already existed in the United States after World War II because of its wartime radar efforts. But France had no comparable infrastructure and had to import talent from occupied Germany, which could not exploit its own radar expertise until the 1950s.
在新兴半导体行业取得成功的一个关键因素是贝尔实验室以及德州仪器和飞兆半导体蓬勃发展的持续创新,这导致了硅晶体管和集成电路的出现。这需要广泛的物质和知识基础设施,以使这些公司保持在这个快速发展的领域的前沿。二战后,由于战时雷达的努力,美国已经存在这样的基础设施。但法国没有可比的基础设施,不得不从被占领的德国引进人才,直到20世纪50年代,德国才能够利用自己的雷达专业知识。
In the absence of any such advantages, it was inevitable that Europe’s fledgling transistor would soon be eclipsed by other, better semiconductor devices and eventually fade from memory.
在没有任何此类优势的情况下,欧洲羽翼未丰的晶体管很快就会被其他更好的半导体器件所取代,并最终从记忆中消失,这是不可避免的。
https://spectrum.ieee.org/how-europe-missed-the-transistor
二、Herbert Franz Mataré 和 Heinrich Welker 的美国专利
https://ppubs.uspto.gov/dirsearch-public/print/downloadPdf/2673948
https://ppubs.uspto.gov/pubwebapp/static/pages/ppubsbasic.html
马塔雷和韦尔克 1949-08-11 申请,1954-03-30 授权的点接触晶体管美国专利“Crystal device for controlling electric currents by means of a solid semiconductor 利用固体半导体控制电流的晶体器件”(U.S. Patent 2,673,948; Filed Aug. 11, 1949)。
图片形式如下:
(1)
(2)
(3)
(4)
三、Herbert Franz Mataré 和 Heinrich Welker 的照片
3.1 马塔雷 Herbert Franz Mataré
图2 马塔雷 Herbert Franz Mataré, 1912-09-22 ~ 2011 09-02, 99
https://aipp.silverchair-cdn.com/aipp/content_public/cms/online/5841/pt-6-6-20170922a.jpg
https://pubs.aip.org/physicstoday/Online/5841/Herbert-Matare
图3 photo-of-herbert-matare.jpg
https://spectrum.ieee.org/how-europe-missed-the-transistor
3.2 韦尔克 Heinrich Welker
图4 韦尔克 Heinrich Welker, 1912-09-09 ~ 1981-12-25, 69
https://tse1-mm.cn.bing.net/th/id/OIP-C.hd6LD0H5rRnRxPPCQYv0oQHaK-?pid=ImgDet&w=474&h=702&rs=1
图5 0046-heinrich-welker-1970-eb-iii-838-300.jpg
参考资料:
[1] 1948: The European transistor invention, Herbert Mataré & Heinrich Welker independently create a germanium point-contact transistor in france. Computer History Museum
https://www.computerhistory.org/siliconengine/the-european-transistor-invention/
[2] Michael Riordan. How Europe missed the transistor [J]. IEEE Spectrum, 2005, 42(11): 52 - 57.
doi: 10.1109/MSPEC.2005.1526906
https://ieeexplore.ieee.org/document/1526906
https://spectrum.ieee.org/how-europe-missed-the-transistor
[3] 1947: Invention of The Point-Contact Transistor, John Bardeen & Walter Brattain achieve transistor action in a Germanium Point-Contact device in December 1947. Computer History Museum
https://www.computerhistory.org/siliconengine/invention-of-the-point-contact-transistor/
[4] 1948: Conception of The Junction Transistor, William Shockley conceives an improved transistor structure based on a theoretical understanding of the P-N Junction effect. Computer History Museum
https://www.computerhistory.org/siliconengine/conception-of-the-junction-transistor/
[5] Who Invented the Transistor? Computer History Museum
https://computerhistory.org/blog/who-invented-the-transistor/
[6] TIMELINES, CHRONICLING OUR ECHNOLOGICAL WORLD, Computer History Museum
https://computerhistory.org/timelines/
[7] ACTIVITIES & RESOURCES, Computer History Museum
https://computerhistory.org/activities-resources/
[8] Patent Public Search Basic (PPUBS Basic)
https://ppubs.uspto.gov/pubwebapp/static/pages/ppubsbasic.html
[9] Herbert Franz Mataré, Heinrich Welker. 1954-03-30, Crystal device for controlling electric currents by means of a solid semiconductor.
https://ppubs.uspto.gov/dirsearch-public/print/downloadPdf/2673948
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